At an event today in San Francisco, Intel announced one of the most important pieces of semiconductor news in many years: the company's upcoming 22nm processors will feature a fundamental change to ...
Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even ...
Computers, despite all their apparent complexity, are basically just a large number of electronic switches, flicking on and off in the right order to process digital information. Semiconductor ...
As downward scaling of transistors continues, optimizing power consumption for mobile devices is a major concern. Power consumption consists of two components: dynamic and static. Dynamic (active) ...
Semiconductor leakage paths can cause excessive quiescent current (also called ground current) in remote sensing applications. These leakage paths shorten battery life and become more critical because ...
The invention of the transistor was a significant breakthrough that altered the course of history for the electronics and computer industries. They are an inseparable part of any electronic device ...
Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...
(Nanowerk News) Scientists at the Fraunhofer Institute for Applied Solid State Physics IAF have succeeded in developing a novel type of transistor with extremely high cut-off frequencies: metal oxide ...
One of the lost pleasures of our modern world is the experience of going shopping at a grocery store, a mall, or a drugstore, ...
DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...
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