A long-running problem in the computer world is that DRAM is the fastest memory available but also volatile, so it can't hold onto its data when power is shut off. This makes it useless for data ...

Non-volatile memory (NVM) technologies have transformed the memory hierarchy by offering byte-addressable persistence alongside high density and low idle power. Unlike conventional dynamic ...

SMART Modular Technologies has announced the availability of its Non-Volatile CXL Memory Module (NV-CMM) for Tier 1 OEMs, adhering to the CXL 2.0 standard. This module combines non-volatile DRAM, ...

What is PCMO ReRAM? Difference between filamentary and PCMO ReRAM. Why tunable persistence is important. The idea of non-volatile, resistive RAM (ReRAM) has been around for a while. Its aim is to ...

Spintronics exploits the spin of electrons in addition to their charge, enabling memory devices that combine non-volatility, high speed and low energy consumption. Central to this field are magnetic ...

For years, emerging memory technologies such as MRAM, ReRAM, FeRAM, and PCM have been pitched as game-changing solutions, combining the persistence of Flash with the speed and endurance of DRAM. These ...

Forbes contributors publish independent expert analyses and insights. This is the third in a set of four blogs about projections for digital storage and memory for the following year that we have been ...

Researchers achieved ultrafast, stable switching of ferroaxial states using polarized terahertz light, paving the way for next-gen data storage. (Nanowerk News) Ferroic materials such as ferromagnets ...

Forbes contributors publish independent expert analyses and insights. This is the second in a set of four blogs about projections for digital storage and memory for the following year that we have ...

TetraMem Inc., a Silicon Valley–based semiconductor company developing analog in-memory computing (IMC) solutions, today announced the successful tape-out, manufacturing, and initial silicon ...

The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS ...

In a new study published in Nano Letters, researchers have shown that molybdenum disulfide (MoS 2), a two-dimensional transition metal dichalcogenide, can exhibit highly controlled resistive switching ...